INA6006AS1 for low frequency amplify application silicon pnp epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. description INA6006AS1 is a silicon pnp transistor. it is designed with high voltage. feature ?small package for easy mounting. ?high voltage v ceo = -150v ?low voltage v ce(sat) = -0.5v(max) ?complementary inc6006as1 application high voltage switching. outline drawing unit m aximum ratingta=25 symbol parameter rating unit v cbo collector to base voltage -160 v v ebo emitter to base voltage -5 v v ceo collector to emitter voltage -150 v i cm peak collector current -200 ma i c collector current -100 ma p c collector dissipation(ta=25) 600 mw t j junction temperature 150 t stg storage temperature -55150 electrical characteristicsta=25 symbol parameter test conditions limits unit min typ max v (br)cbo c to b break down voltage i c =-100ai e =0ma -160 - - v v (br)ebo e to b break down voltage i e =-10ai c =0ma -5 - - v v (br)ceo c to e break down voltage i c =-1mar be = -150 - - v i cbo collector cut off current v cb =-120vi e =0ma - - -100 na i ebo emitter cut off current v eb =-3vi c =0ma - - -100 na h fe1 dc forward current gain1 v ce =-5vi c =-1ma 45 - - - h fe2 dc forward current gain2 v ce =-5vi c =-10ma 90 - 270 - h fe3 dc forward current gain3 v ce =-5vi c =-50ma 45 - - - v ce(sat)1 c to e saturation voltage1 i c =-10mai b =-1ma - - -0.2 v v ce(sat)2 c to e saturation voltage2 i c =-50mai b =-5ma - - -0.5 v v be(sat)1 b to e saturation voltage1 i c =-10mai b =-1ma - - -1.0 v v be(sat)2 b to e saturation voltage2 i c =-50mai b =-5ma - - -1.0 v v be(on) b to e on voltage v ce =-5vi c =-10ma - - -0.77 v f t gain bandwidth product v ce =-10vi e =10ma 100 - 300 mhz cob collector output capacitance v cb =-10vi e =0maf=1mhz - 2.8 6 pf jeita- jedec- terminal connector ?emitter ?collector base 4.0 1.0 1.0 13.0min 3.0 2.5 2.5 0.45 0.1 2.5 0.4 14.0 7.5max marking a 0 6 w t yp e name h fe item lot no
INA6006AS1 for low frequency amplify application silicon pnp epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. typicial characteristics -10 -100 -1000 -0.01 -0.1 -1 -10 -100 dc forward current gain hfe collector current ic(ma) dc forward current gain vs. collector current vce=-5v 85 25 -40 -0.01 -0.1 -1 -10 -100 -0 -0.2 -0.4 -0.6 -0.8 -1 collector current ic(ma) base to emitter voltage vbe (v) common emitter transfer vce=-5v 25 85 -40 -0.01 -0.1 -1 -0.01 -0.1 -1 -10 -100 collector to emittersaturation voltage vce(sat) v) collector current ic(ma) collector to emittersaturation voltage vs. collector current ic/ib=10 85 25 -40 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100 collector to emittersaturation voltage vce(sat) v) collector current ic(ma) base to emittersaturation voltage vs. collector current ic/ib=10 85 25 -40 -0 -10 -20 -30 -40 -50 -60 -70 -0 -5 -10 -15 -20 collector current ic (ma) collector emitter voltage vce (v) common emitter output ta=25 ib=0 ib=300ua ib=250ua ib=200ua ib=150ua ib=100ua ib=50ua 0 100 200 300 400 500 600 700 800 050100150 collector dissipation pc (mw) ambient temperature ta () collector dissipation vs ambient temperature
INA6006AS1 for low frequency amplify application silicon pnp epitaxial type isahaya electronics corporation preliminary noticethis is not a fi nal specification some parametric are subject to change. 1 10 100 1000 0.1 1 10 100 gain band width product t (mh) emitter current ie (a) gain band width product vs. emitter current ta=25 vce=-10v 1 10 100 -0.1 -1 -10 -100 collector output capacitance cob (pf) collector to base voltage vcb (v) collector output capacitance vs. collector to base voltage ta=25 f=1mhz 1 10 100 -0.1 -1 -10 collector input capacitance cib (pf) emitter to base voltage veb (v) collector input capacitance vs. base to emitter voltage ta=25 f=1mhz
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. mar.2013
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